The content of the unified theory of weak electricity: the electromagnetic action and the weak action correspond to the basic gauge field. The electromagnetic action is parity conservation, and the weak action is parity non-conservation. They correspond to the one-dimensional orthosymmetric group U and the two-dimensional orthonormal group SU, respectively, which cannot simultaneously accommodate both. What can accommodate them at the same time is the SU @ U group, which has 4 generators, 3 are SU's, and 1 is U's. These four generators correspond to the four weak charges carried by lepton and quark and the four basic gauge fields they generate (the gauge field is a vector field that transmits the interaction between the material field and its corresponding particles) W1L, W2L, W3L , WYL. The basic gauge field makes the motion law of the material field (the spin field corresponding to the lepton and quark with a spin quantum number of 1/2) and the scalar field (the corresponding particle's spin quantum number is zero) determined in SU @ U The domain specification remains unchanged. But there is no observable quantum in the basic gauge field, that is, there is no corresponding particle. Basic gauge field Two or two groups of synthetic intermediate vector boson and electromagnetic fields exist in nature. There is a scalar field called Higgs field. The above basic gauge field interacts with the Higgs field in two sensitized cells, organic solar cells, etc. It is worth noting the development of thin-film batteries. Unless crystalline silicon thin-film batteries, there are crystalline silicon thin-film batteries. This type of battery can greatly save raw materials and reduce the process flow. Its main structure is that silicon is deposited on a glass screen printer or a substrate of high temperature resistant material. In particular, the latter can realize continuous production lines and obtain products with high productivity and high conversion efficiency. The key is to solve the problem of low-cost substrate materials with ideal technical characteristics. As another example, amorphous silicon-crystalline silicon heterojunction solar cells. The amorphous silicon film is deposited on both sides of the silicon wafer. Sunlight is mainly absorbed by single crystal silicon or polycrystalline silicon. The advantage of this type of battery is that it has higher conversion efficiency; the surface passivation is good, so the carrier surface recombination rate is low; the preparation process can be carried out below 200e Celsius temperature, the process of heat accumulation is low, the energy consumption is small; the cost of the product low.
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