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Typical power management architectures High power levels result in higher system voltages, so the various components used in the converter have higher cut-off voltages. To reduce the power loss of voltages above 400V, most circuit designers prefer to use insulated gate bipolar transistors (IGBTs) or the latest silicon carbide (SiC) FETs. These devices can cut off voltages up to 1200V and have lower "on" resistance than equivalent Si MOSFETs. These complex power systems are typically managed by a digital signal processor, a microcontroller, or a dedicated digital power controller. Therefore, they often require a high noise switching environment that simultaneously isolates both power and signal to the power stage. Even during steady-state switching cycles, the voltage and current of the circuit can change dramatically, creating significant ground bounce.
Figure 1: Simplified power transfer flow diagram for wind turbines to the grid
Figure 2 shows that even a single-phase DC-to-AC inverter requires many gate drivers to properly switch the IGBTs in the power stage. The power switch driver described in this article is based on the Texas Instruments single-channel gate driver UCC27531. As a single-channel gate driver, the UCC27531 can drive any switch of the switching bridge as long as it has the necessary signal and bias isolation. Signal isolation is achieved using an optocoupler or digital isolator. For bias isolation, designers can use a bootstrap circuit with diodes and capacitors, or an isolated bias supply. Another method is to connect the gate driver on the same isolated side as the controller and then drive the switch through a gate transformer behind the gate driver. This method allows the driver to be biased through a non-isolated power supply on the console.
Figure 2: Basic structure of a single-phase inverter (please read the PDF for details)