[High-tech LED] Samsung Corning Precision Materials ( SCPM ) demonstrated a 1 to 6-inch GaN substrate at the "KES2011 (Korea Electronics Industry Exhibition)".
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According to SCPM, the company uses a CVD process based on HVPE (Hydride Vapor Phase Epitaxy) to form a GaN single crystal, which is then processed by dicing and grinding to obtain a GaN substrate.
At present, SCPM has completed the research and development of high-quality GaN substrates under 4 inches, and plans to start mass production of 4-inch products in 2014.
SCPM is developing the GaN substrate as an innovative material for high-efficiency LED chips, and further plans to apply GaN substrates in fields such as semiconductor components for wireless communication and power semiconductor devices such as smart grids. 