Antenk Card SIM Connectors are precision engineered PCB mount connectors developed to mate with the plated fingers of a printed circuit daughter board. Their bifurcated, cantilever contacts are set in a dual readout configuration and they offer a reliable connection for a wide range of PCB thicknesses. Antenk`s sturdy solder tails with tapers allow easy insertion and rugged durability
SIM Card Connectors Introduction
SIM card connectors designed for applications requiring two or more pcb`s to be connected and readily removed.
As the market trends towards versatility, customers need flexible high-speed edge card receptacles that can be utilized across as many platforms as possible. Through creating industry standards by collaborating with customers, Antenk is committed to offering a wide range of edge card receptacles that can be used in multiple applications across one solution. SIM Card Connector,Pci Card Edge Connector,Pitch Card Edge Connector,Pcb Edge Card Connector,AMC / AMC B+ Connectors,Micro TCA Connectors,PCI Express / PCI Connectors,Standard Card Edge Connectors ShenZhen Antenk Electronics Co,Ltd , https://www.antenkelec.com
Zheng Liyao, deputy director of GLII: sapphire substrate fiery investment continues
Zheng Liyao, deputy director of the High-tech LED Industry Research Institute (GLII), pointed out that in 2010, the output value of China's LED epitaxial chips reached 4 billion yuan, a year-on-year increase of 100%.
Zheng Liyao believes that the sapphire substrate investment boom continues. Compared with last year's domestic sapphire substrate investment of 1.8 million yuan, the total investment of the sapphire substrate project in January-April this year reached 6.63 billion yuan, and the planned annual production capacity exceeded 35 million pieces.
And whether the hot investment in sapphire substrate will cause overcapacity, Zheng Liyao said that until the third quarter of next year, there will be basically no overcapacity, so the price of the entire sapphire substrate is relatively stable, and may occasionally be in the middle. Rise, but will basically stabilize in the 28-30 US dollars / (2 inches) film range. 
Dr. Liang Bingwen, Chinese Academy of Sciences: Analysis of the upstream patent technology network of the semiconductor lighting industry
Dr. Liang Bingwen, a researcher at the Suzhou Institute of Nanotechnology and Nano-Bionics, Chinese Academy of Sciences, gave a speech on "Analysis of the Upstream Patent Technology Network of the Semiconductor Lighting Industry."
Liang Bingwen believes that LED is an industry full of “minesâ€. From 2000 to the present, patent litigation has not stopped. Among them, there are about 20,000 patents authorized by the United States, of which 256 are used for litigation. In addition, the five international giants (Nichia, Cree, Philips, Osram, Toyota Synthetic) have formed a very large and strong patent network after cross-authorization, and now more than 8,000 patents related to each other.
For the risk of domestic patent warfare, Liang Bingwen believes that the greater the investment, the greater the risk; the later the entry, the greater the risk; the patent that expires soon, the risk is the greatest; and if there is no card in hand and there is no effective response, only wait for The defendant.
The patent areas that need to be focused on in China are “blue light + phosphor, graphic substrate/surface roughening, conductive transparent electrode, vertical chipâ€.
So far, China's domestic patents are still unfamiliar and not enough attention, especially for some new investment projects. There is no adequate due diligence on IP. There is a big legal risk, making patents like the sword of Damocles hanging over the head. It is dangerous and serious, so Chinese enterprises need to pay considerable attention to establish a patent team that is truly their own, otherwise it will be too late when it comes to legal proceedings. 
Liu Lijian, deputy general manager of North Microelectronics LED Division: Development and Challenges of Massive LED Chip Mass Production Process Equipment
Liu Lijian, deputy general manager of the North Microelectronics LED Division, delivered a keynote speech on "Development and Challenges of Massive LED Chip Mass Production Process Equipment."
Liu Lijian said that the ICP series of northern microelectronic LED devices has become the first choice etching equipment for many LED manufacturers, and the ELEDETM 330 equipment has a leading edge in large capacity design and excellent process performance.
One of the problems in the mass production of LEDs is that the final output has a defective product. The solution for many manufacturers is to take time and effort to check each process and key equipment one by one. In order to meet the requirements of controlling the quality of the final product, Northern Microelectronics developed the APC software for the process control system. 
The APC software mainly includes three major functional modules, and based on this, establishes an automatic early warning mechanism:
1. Data management. Real-time data collection, display, storage, import and export, and historical data query for the production process of single/multiple devices;
2. Statistical control. Statistical process monitoring (co-monitoring of values ​​and data, more conducive to the detection of anomalies, timely warning), offline quality analysis, summary statistical reports (to make data visualization);
3. Fault diagnosis. Control model management (modeling for variable analysis based on different standard values), online fault analysis, offline fault analysis, and fault information reporting.
Other features of the APC software include: a system architecture that can be flexibly supported by different devices and devices; a customizable external data interface; embedded in production equipment such as the ELELETM 330.
Dr. Wang Chengxin, Institute of Crystal Materials, Shandong University: High Power GaN LED Technology
Dr. Wang Chengxin, a special expert at the Institute of Crystal Materials, Shandong University, gave a speech on "High Power GaN LED Technology".
Dr. Wang Chengxin first introduced the epitaxial technology of high-power GaN LEDs, and believed that the development of LED materials is facing the following three requirements:
1. Further improve the quality of LED material crystals and reduce the dislocation density;
2. Further optimize the design of the epitaxial structure, improve the luminous efficiency, and suppress the Droop effect;
3. Improve the quality of P-type materials and reduce the cost of P-type material technology for roughening the in-situ growth appearance. 
Then, Dr. Wang Chengxin focused on the core technology of high-power GaN LEDs, pointing out that Flip-chip+ luminescent surface (substrate) patterning technology, TFFC+ surface roughening technology, photonic crystal + PSS epitaxial technology should be used to improve light. Extraction efficiency, at the same time, the positive and vertical structures have advantages and disadvantages on high-power LEDs. However, due to heat dissipation, Thin Chip and other technologies, the vertical structure has great advantages under high current and ultra-high current working conditions, which is the main development in the future. Direction, but also need to increase yield and reduce costs.
Finally, Wang Chengxin analyzed the Sic substrate-GaN LED technology, and made a brief review of the progress of growing GaN on Sic substrate, and concluded that the future research and development direction is through Sic substrate stripping technology, flip-chip LED technology, Thin chip technology and other high-power GaN LED die technologies have enabled the laboratory to reach the target of 130 lm/w in the next 12 to 18 months.
Professor Fan Guanghan of South China Normal University: New development of LED epitaxial process and equipment
On June 11th, "Asia LED Lighting Summit Forum - Epitaxial Chip Technology and Process and Epitaxial Equipment and Materials", Professor Fan Guanghan of South China Normal University delivered a special speech on "LED Epitaxial Process and New Development of Equipment". 
In his speech, Professor Fan Guanghan first pointed out that the current technical problems faced by large-scale LED production include efficiency drop, polarization field action, lattice mismatch with the substrate, and further improvement of internal quantum efficiency. In response to the above problems, Professor Fan then exemplified the development of the latest LED epitaxial technology in the world as follows:
1. LED substrate development: GaN homogenous substrate; non-polar surface substrate: attempting to develop on a non-polar Si substrate, inserting Al2O3 on the Si substrate to improve crystal quality and luminescence; Al2O3 insertion layer; Graphic Substrate: Exploring breakthroughs to nanometer-scale graphic substrates, sapphire nano-patterned substrates are significantly superior to traditional sapphire substrates; large-sized substrates;
2. New development of horizontal overgrowth - solve the problem of mismatch and improve efficiency. SiO2 and hole arrays are formed on the GaN layer, and a layer of GaN is added to improve the epitaxial quality and increase the optical output power by nearly 50%. The French asymmetric lateral overgrowth technology significantly improves the quality of the GaN film; the Swiss embedded SiO2 photon quasicrystal technology Using GaN nanowires for epitaxy, the optical output power is three times that of conventional;
3, quantum well new design - nano-pyramid structure to grow yellow light quantum well, effectively suppress the piezoelectric field; concave quantum well, reduce the electrostatic field, reduce electron leakage, improve internal quantum efficiency, reduce efficiency degradation; use nanoporous GaN Enhance the growth of quantum dots in the LED, increase the density of the quantum dots, increase the light output power by 1.45 times; InAlN acts as an electron blocking layer; the quantum well barrier is doped with Si to improve the internal quantum efficiency of the LED; SPS is a p-type contact layer;
4. Photonic crystals improve light extraction efficiency;
5, GaN-based LED new technology, UV LED, dual-wavelength LED.
Finally, Professor Fan Guanghan pointed out that the development of MOCVD equipment pointed out that foreign countries are in a leading position in this field. Many domestic institutions are actively researching and developing, but only the prototypes are used in pilot projects, and the overall development is relatively slow. 
Flexible Solutions Solving Many Problems
Antenk Edge Card Connector Solutions solve many problems across a wide range of circuit sizes, configurations, pitch, and PCB-attach terminations. Scroll down list to see more on our full line of edge card solutions.
Types of Card Edge Connectors
AMC / AMC B+ Connectors
Micro TCA Connectors
PCI Express / PCI Connectors
Standard Card Edge Connectors
Edgecard PCB Connectors Range
On June 11th, the “Asia LED Lighting Summit Forum - Epitaxial Chip Technology and Process and Epitaxial Equipment and Materials†was held by Gaogong LED in the conference room of Guangzhou Pazhou Complex. Zheng Liyao, deputy director of the High-tech LED Industry Research Institute (GLII), Dr. Liang Bingwen, researcher of the Suzhou Institute of Nanotechnology and Nano-Bionics, Chinese Academy of Sciences, Liu Lijian, deputy general manager of the North Microelectronics LED Division, and Wang Chengxin, a special expert of the Institute of Crystal Materials, Shandong University Dr. Fan Guanghan from the South China Normal University gave a wonderful speech on the topics related to the technology, investment, patents and domestic equipment of the upstream epitaxial chip industry.