In the past few years, 4G LTE (Long Term EvoluTIon) has become an important configuration for high-end smartphones and tablets. However, as more than half of 2013, a new wireless technology will have a great impact on 4G LTE. This technology is 4G LTE Advanced. The first handheld device embedding this high-speed wireless technology is a special edition of the Samsung Galaxy S4, which will be sold in South Korea this summer and later enter markets around the world. The theoretical download speed of the technology can reach 3Gbps, and the upload speed can reach 1.5Gbps, which is three times faster than the current 4G LTE technology. However, the LTE Advanced service will not be popularized instantly because some networks require base station (signal tower) hardware updates. However, these infrastructure updates will not completely reorganize the existing mobile communication system like 3G to 4G LTE. In other words, 4G LTE Advanced is not 5G LTE, but simply a more efficient use of existing LTE technology. With the improvement of the network, brand new mobile chips will also appear to make better use of these improvements. The reason why 4G LTE Advanced can have such huge throughput growth is largely due to carrier integration technology. A major problem with LTE technology is that the available frequencies are relatively dispersed, which makes it difficult for operators to effectively use them. Carrier aggregation technology allows service providers to integrate two separate frequency bands to reduce latency and increase data rates. In other words, your data is no longer circulating on two separate roads, but can be run on a wider multi-lane highway. To achieve 4G LTE Advanced technology, the Galaxy S4 is said to be equipped with Qualcomm Snapdragon 800 chips, but Broadcom, Nvidia, and STMicroelectronics are also making LTE Avanced compatible chips. Russia currently supports LTE Advanced. Soon, South Korea will also support a variant of LTE Advanced. US operators have not yet determined when to support LTE Advanced. The Rectifier Bridge is to seal the rectifier in a shell. Divided into full bridge and half bridge. The full bridge seals the four diodes of the connected bridge rectifier circuit. The half bridge is to seal together half of the four diode bridge rectifiers. Two bridges can be used to form a bridge rectifier circuit. One half bridge can also form a full-wave rectifier circuit with a center tap of the transformer. Rectifier circuit and operating voltage. Rectifier Bridge Diode Bridge Rectifier,3 Phase Bridge Rectifier,Rectifier Bridge,Rectifier Bridge Dongguan Agertech Technology Co., Ltd. , https://www.agertechcomponents.com