Application: Automobile Wire Harness
Gauge: AWG 28 to AWG 16
Length: Customized
We can provide first price for products produced in our factory; for sourcing products,we can also provide most competitive price because we have
large relationship among our friend factory.
Automotive Wiring Harness,Auto Wiring Harness,Universal Automotive Wiring Harness,Effect Assurance Cable Wire Harness Dongguan YAC Electric Co,. LTD. , https://www.yacenter-cn.com
Place of Origin: Dongguan, China (Mainland)
Connector: Molex, JST, TYCO, AMP, JAM, KET,Amphenol, Wago,Weidmuller, Phoenix,
Wires & Cables: UL, VDE standards
Inspection: 100% inspection before delivery
Certification UL, IATF16949, CE
Cree announces the availability of high-efficiency GaN HEMT transistors for military and commercial S-band radars. The new S-band GaN HEMT transistors are rated at 60W and have a frequency range of 3.1 to 3.5 GHz, providing superior drain efficiency (nearly 70%) compared to traditional Si or GaAs MESFET devices. At the same time, the combination of high efficiency and high power density helps minimize heat dissipation and reduces size and weight in commercial radar system applications.
Jim Milligan, Director of Radio Frequency (RF) and Microwave Division, said: "The introduction of the new S-band GaN HEMT devices enriches Cree's highly efficient S-band GaN transistors and monolithic microwave integrated circuit (MMIC) product families. Commercial radar systems offer more options in high-power amplifier circuits. High-efficiency S-band GaN HEMT device rates can help with extended signal fidelity while maximizing signal fidelity and minimizing thermal management requirements. Wireless RF design engineers drastically reduce the size and weight of radar systems while expanding the range of applications and reducing installation costs."
The Cree CGH35060 GaN HEMT transistor has a nominal pulse power of 60W at 28V (when the pulse width is 100 microseconds), a power gain of 12dB, and a drain efficiency of 65%, which is 50% higher than conventional silicon LDMOS devices. . The CGH35060 GaN device has been validated in a high power amplifier reference design (S-band frequency between 3.1 and 3.5 GHz). Compared to GaAs and Si technologies, the CGH35060 features long pulse, high power performance (less than 0.6dB), excellent signal fidelity, and very low power attenuation.
The new GaN HEMT transistors are matched to the full range of Cree S-band products, including the CGH31240F/CGH35240F fully matched 240W GaN HEMT devices (2.7 – 2.9GHz / 3.1 – 3.5GHz) and the CMPA2735075F two-package GaN HEMT monolithic microwave integrated circuit ( MMIC).