According to a consulting report by Maimes, pSemi ™ Corporation (formerly known as Peregrine Semiconductor, hereinafter referred to as pSemi), a subsidiary of Murata company (Murata, Japan), recently announced the launch of solid-state LiDAR (laser) at the INTERNATIONAL MICROWAVE SYMPOSIUM Radar) GaN FET (gallium nitride field effect transistor) driver PE29101. PE29101 has the industry's fastest rise time and lower minimum pulse width. This high-speed driver helps design engineers take full advantage of the full performance and switching speed advantages of GaN transistors. In solid-state LiDAR systems, faster switching speed means higher LiDAR imaging resolution and accuracy. PE29101 GaN FET driver “As GaN gradually proves its role in applications such as solid-state LiDAR, design engineers are using pSemi ’s high-speed drivers to maximize the advantages of GaN ’s fast switching,†said Jim Cable, pSemi ’s chief technology officer. “With PE29101 ’s rise and fall rates , Can help the LiDAR system to achieve the highest possible imaging resolution, which is what the industry needs to achieve the most complete potential performance of the LiDAR system. " The operating principle of LiDAR is similar to millimeter-wave radar, except that it uses pulsed lasers to accurately map the surrounding environment, and is often used for high-resolution mapping. LiDAR is now used in automotive ADAS (Advanced Driver Assistance System) systems and is widely regarded as a necessary enabling technology for fully autonomous vehicles. In addition, solid-state LiDAR has gradually emerged as a leader in future commercial LiDAR systems due to its economy, reliability, and more compact size than mechanical LiDAR. In the LiDAR system, the switching speed and rise time of the pulsed laser directly affect the measurement accuracy of LiDAR. To increase the resolution, the current needs to be switched through the laser diode as quickly as possible. GaN technology relies on its extremely low input capacitance and its significantly faster switching speed than MOSFETs (metal oxide semiconductor field effect transistors) to provide higher resolution and faster response time for LiDAR systems. GaN FETs must be controlled by very fast drivers to maximize their fast switching potential. Higher switching speed requires the driver to have a fast rise time and a lower minimum output pulse width. PE29101 has these key performance parameters, which can help GaN technology to improve LiDAR resolution. Features, packaging, price and availability PE29101 is a half-bridge FET driver that controls the gate of GaN transistors. This driver output can provide switching conversion speeds in the sub-nanosecond range for switching applications up to 40 MHz. The rise / fall time of PE29101 is 1 ns, 100 pF load, and the minimum output pulse width is 2 ns. The operating voltage range is 4 V ~ 6.5 V, which can support a high-side floating supply voltage of 80 V. The output source current of PE29101 is 2A, and the sink current is 4A. PE29101 offers flip-chip packaging, and can now provide products, samples and evaluation kits for mass production. The unit price for 1,000 orders is $ 2.79. Wuxi Doton Power , http://www.dotonpower.com
